smd type transistors 1 www.kexin.com.cn npn silicon power switching transistor FCX1047A features 2w power dissipation. 20a peak pulse current. excellent hfe characteristics up to 20 amps. extremely low saturation voltage e.g. 25mv typ. extremely low equivalent on-resistance. r ce(sat) 40m at 4a. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 10 v emitter-base voltage v ebo 5v continuous collector current i cm 20 a peak pulse current i c 4a power dissipation p tot 1w operating and storage temperature range t j, t stg -55to+150
2 smd type transistors www.kexin.com.cn electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =100a 35 v collector-emitter breakdown voltage * v (br)ceo i c =10ma 10 v emitter-base breakdown voltage v (br)ebo i e =100a 5v collector cut-off current i cbo v cb =20v 0.3 10 na collector emitter cut-off current i ces v ce =20v 0.3 10 na emitter cut-off current i ebo v eb =4v 0.3 10 na collector-emitter saturation voltage * v ce( sat) i c =0.5a, i b =10ma i c =1a, i b =10ma i c =3a, i b =15ma i c =4a, i b =50ma i c =5a, i b =25ma 25 50 140 160 220 40 70 200 240 350 mv base-emitter saturation voltage * v be( sat) i c =4a, i b =50ma 920 1000 mv base-emitter on voltage * v be(on ) i c =4a, v ce =2v 860 950 mv static forward current transfer ratio * h fe i c =10ma, v ce =2v i c =0.5a,v ce =2v i c =1a,v ce =2v i c =4a,v ce =2v i c =5a,v ce =2v i c =20a,v ce =2v 280 290 300 200 200 60 430 440 450 350 330 110 transitional frequency f t i c =50ma, v ce =10v f=50mhz 150 mhz output capacitance c obo v cb =10v, f=1mhz 85 pf turn-on time t (on) i c =4a, v cc =10v 130 ns turn-off time t (off) i b1 =i b2 =40ma 230 ns * pulse test: tp = 300 s; d 0.02. FCX1047A marking marking 047
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